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RCX160N20 - ROHM Semiconductor

Description: 10V Drive Nch MOSFET

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RCX160N20 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RCX160N20 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FM_2022
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3D Models
RCX160N20 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-220FM_2022
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RCX160N20 Details

  • Manufacturer Part Number:

    RCX160N20

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220FM, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20.7 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RCX160N20 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. ROHM also recommends using a thermistor or thermocouple to monitor the device temperature.
  • The maximum allowed voltage for the gate-source (Vgs) is ±20V, and for the gate-drain (Vgd) it's ±30V. Exceeding these limits can damage the device.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Additionally, follow proper handling and storage procedures to prevent ESD damage.
  • ROHM recommends a gate resistance (Rg) of 10Ω to 20Ω for optimal switching performance. A lower Rg can improve switching speed, but may increase power losses.

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RCX160N20 Overview

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