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RCX200N20 - ROHM Semiconductor

Description: 10V Drive Nch MOSFET

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PCB Footprints
RCX200N20 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FM-22
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3D Models
RCX200N20 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220FM-22
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RCX200N20 Details

  • Manufacturer Part Number:

    RCX200N20

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220FM, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    396 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0427 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RCX200N20 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current. Additionally, ensure good thermal design, use a heat sink if necessary, and consider using a thermistor or thermal sensor to monitor the device temperature.
  • The maximum allowed voltage for the gate-source (Vgs) and gate-drain (Vgd) pins is ±20V. Exceeding this voltage can damage the device.
  • While the RCX200N20 can be used in switching applications, it's not recommended for high-frequency (>100kHz) operation due to increased switching losses and reduced efficiency. For high-frequency applications, consider using a MOSFET with a lower gate charge and optimized for high-frequency operation.
  • To protect the RCX200N20 from ESD, follow proper handling and storage procedures, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

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RCX200N20 Overview

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