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RD07MUS2B - Mitsubishi

Description: RF POWER MOS FET Silicon MOSFET Power Transistor, 175MHz, 527MHz, 7W

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RD07MUS2B - Mitsubishi  - 3D model
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RD07MUS2B Details

  • Manufacturer Part Number:

    RD07MUS2B

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT PACKAGE-10

  • Pin Count:

    10

  • ECCN Code:

    EAR99

  • Manufacturer:

    Mitsubishi Electric

  • YTEOL:

    5.12

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    3 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-XQCC-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

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RD07MUS2B Overview

Use the download button to access the RD07MUS2B 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like RD07M, or try a keyword search, such as RF Power Field-Effect Transistors

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