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RD2.2EB - Renesas Electronics

Description: 500 mW DHD ZENER DIODE (DO-35) Forward Current IF 200 mA Power Dissipation P 500 mW Surge Reverse Power PRSM 100 W (t = 10 µs)

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RD2.2EB - Renesas Electronics PCB footprint - Other - Other - DO-35
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RD2.2EB Details

  • Manufacturer Part Number:

    RD2.2EB

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DO-35

  • Package Description:

    GLASS, DHD, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • Dynamic Impedance-Max:

    120 Ω

  • JEDEC-95 Code:

    DO-35

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e0

  • Knee Impedance-Max:

    2000 Ω

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.5 W

  • Qualification Status:

    Not Qualified

  • Reference Voltage-Nom:

    2.2 V

  • Reverse Current-Max:

    120 µA

  • Reverse Test Voltage:

    0.7 V

  • Surface Mount:

    NO

  • Technology:

    ZENER

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Voltage Temp Coeff-Max:

    -1.5 mV/°C

  • Voltage Tol-Max:

    6.4%

  • Working Test Current:

    20 mA

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RD2.2EB Overview

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Part Image RD2.2EB NEC Electronics Group

Zener Diode, 2.27V V(Z), 6.4%, 0.5W, Silicon, Unidirectional, DO-35

Part Image RD2.2EB Rugao Dachang Electronics Co Ltd

Zener Diode, 2.27V V(Z), 6.4%, 0.5W, Unidirectional, DO-35