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RD3H045SPFRATL - ROHM Semiconductor

Description: MOSFET Pch -45V Vdss -4.5A TO-252(DPAK); TO-252

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RD3H045SPFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3H045SPFRATL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3H045SPFRATL Details

  • Manufacturer Part Number:

    RD3H045SPFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-07-04

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3H045SPFRATL Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer connected to the thermal pad, and to use thermal vias to dissipate heat. Additionally, keeping the PCB layers as thin as possible and using a thermal interface material can also help.
  • To ensure proper soldering, use a soldering iron with a temperature of 350°C to 370°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the time the iron is in contact with the device. Also, make sure the PCB is clean and free of oxidation.
  • When handling the device, take precautions to prevent static electricity damage by wearing an anti-static wrist strap or using an anti-static mat. Also, avoid touching the device's pins or pads, and handle the device by the body or the pins, not the leads.
  • The optimal input capacitor value depends on the input voltage ripple, output voltage, and output current. A general rule of thumb is to use a capacitor with a value of 10uF to 22uF, but it's recommended to consult the application note or contact ROHM support for specific guidance.
  • Thermal design considerations include ensuring good airflow around the device, using a heat sink if necessary, and keeping the device away from other heat sources. The device's thermal pad should be connected to a large copper area on the PCB to dissipate heat.

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RD3H045SPFRATL Overview

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Part Image RD3H045SPTL1 ROHM Semiconductor

Power Field-Effect Transistor, 4.5A I(D), 45V, 0.26ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252