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RD3H080SPFRATL - ROHM Semiconductor

Description: MOSFET Pch -45V Vdss -8A ID TO-252(DPAK); TO-252

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RD3H080SPFRATL - ROHM Semiconductor - PCB symbol
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PCB Footprints
RD3H080SPFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3H080SPFRATL - ROHM Semiconductor - 3D model - Other - TO-252 (DPAK)_Master
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RD3H080SPFRATL Details

  • Manufacturer Part Number:

    RD3H080SPFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-07-04

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.147 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3H080SPFRATL Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • The maximum allowed voltage transient for the RD3H080SPFRATL is ±500mV. Exceeding this limit may cause damage to the device or affect its reliability.
  • While the RD3H080SPFRATL is designed to operate in a wide range of temperatures, it's not recommended for use in high-humidity environments (>80% RH) without proper protection, such as conformal coating or hermetic sealing.
  • ROHM recommends storing the RD3H080SPFRATL in a dry, cool place (<30°C, <60% RH) with the device in its original packaging or anti-static bag to prevent damage from moisture or electrostatic discharge.

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RD3H080SPFRATL Overview

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