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RD3H080SPTL1 - ROHM Semiconductor

Description: Pch -45V -8A Power MOSFET

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PCB Footprints
RD3H080SPTL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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3D Models
RD3H080SPTL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3H080SPTL1 Details

  • Manufacturer Part Number:

    RD3H080SPTL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-07-24

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.147 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3H080SPTL1 Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and consider derating the device's power rating according to the temperature derating curve in the datasheet.
  • ROHM recommends a soldering profile with a peak temperature of 260°C, a dwell time of 10-30 seconds, and a cooling rate of 4°C/s or less to prevent thermal shock.
  • Yes, but ensure proper moisture protection measures are taken, such as conformal coating or potting, to prevent moisture ingress and corrosion.
  • Check the input voltage, output load, and feedback resistors for proper configuration and values. Also, verify that the device is properly heat-sinked and that the PCB layout is optimized for thermal performance.

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RD3H080SPTL1 Overview

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Part Image RD3H080SPFRATL ROHM Semiconductor

Power Field-Effect Transistor, 8A I(D), 45V, 0.147ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252