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RD3L050SNFRATL - ROHM Semiconductor

Description: Automotive Nch 60V 5A Power MOSFET

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RD3L050SNFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3L050SNFRATL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3L050SNFRATL Details

  • Manufacturer Part Number:

    RD3L050SNFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-07-03

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3L050SNFRATL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2mm x 2mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A thermal resistance of 10°C/W or less is recommended.
  • To ensure stable operation with high-frequency switching, ROHM recommends using a low-ESR capacitor (e.g., ceramic or film capacitor) with a capacitance value of 10uF or more, and a resistance value of 1Ω or less, in parallel with the output capacitor.
  • ROHM recommends keeping the input voltage deviation within ±10% of the nominal input voltage to ensure stable operation and prevent damage to the device.
  • ROHM recommends using an overcurrent protection circuit (e.g., a current sense resistor and a comparator) and a thermal protection circuit (e.g., a thermistor and a comparator) to prevent damage from overcurrent and overheating.
  • ROHM recommends a soldering temperature of 260°C or less, and a soldering time of 10 seconds or less, to prevent damage to the device.

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RD3L050SNFRATL Overview

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Part Image RD3L050SNTL ROHM Semiconductor

Power Field-Effect Transistor, 5A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252