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RD3L080SNFRATL - ROHM Semiconductor

Description: Automotive Nch 60V 8A Power MOSFET

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RD3L080SNFRATL - ROHM Semiconductor - PCB symbol
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RD3L080SNFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3L080SNFRATL - ROHM Semiconductor - 3D model - Other - TO-252 (DPAK)_Master
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RD3L080SNFRATL Details

  • Manufacturer Part Number:

    RD3L080SNFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-07-04

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.109 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3L080SNFRATL Frequently Asked Questions (FAQs)

  • The thermal resistance (Rth) of the RD3L080SNFRATL is 25°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case).
  • Yes, the RD3L080SNFRATL is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high resonance frequency.
  • To ensure reliability, follow the recommended operating conditions, storage conditions, and handling procedures outlined in the datasheet. Additionally, consider implementing protective measures such as overvoltage protection, surge protection, and moisture protection.
  • The recommended land pattern for the RD3L080SNFRATL is available in the ROHM Semiconductor's documentation and can be found in the 'Recommended Land Pattern' section of the datasheet.
  • Yes, the RD3L080SNFRATL is AEC-Q200 qualified, making it suitable for use in automotive applications. However, ensure that the device meets the specific requirements of your application and follow the recommended operating conditions.

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RD3L080SNFRATL Overview

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RD3L080SNFRATL Alternates

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Part Image RD3L080SNTL ROHM Semiconductor

Power Field-Effect Transistor, 8A I(D), 60V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252