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RD3P130SPTL1 - ROHM Semiconductor

Description: Pch -100V -13A Power MOSFET

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RD3P130SPTL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3P130SPTL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3P130SPTL1 Details

  • Manufacturer Part Number:

    RD3P130SPTL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Date Of Intro:

    2017-07-24

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3P130SPTL1 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the RD3P130SPTL1 is 2.5V to 5.5V.
  • To ensure the stability of the output voltage, it is recommended to use a ceramic capacitor with a capacitance value of 1uF or more between the VOUT and GND pins.
  • The maximum output current that the RD3P130SPTL1 can provide is 300mA.
  • To reduce the noise and ripple in the output voltage, it is recommended to add a noise filter capacitor (e.g. 10nF) between the VOUT and GND pins.
  • The thermal shutdown temperature of the RD3P130SPTL1 is typically 150°C.

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Part Image RD3P130SPTL ROHM Semiconductor

Power Field-Effect Transistor, 13A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252