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RD3U080AAFRATL - ROHM Semiconductor

Description: Trans MOSFET N-CH 250V 8A Automotive 3-Pin(2+Tab) DPAK-1

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PCB Footprints
RD3U080AAFRATL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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3D Models
RD3U080AAFRATL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3U080AAFRATL Details

  • Manufacturer Part Number:

    RD3U080AAFRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-09-09

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    4.67 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3U080AAFRATL Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation, ROHM recommends derating the power dissipation according to the temperature derating curve in the datasheet. Additionally, ensure good thermal design, and consider using a heat sink or thermal interface material if necessary.
  • Although the datasheet specifies a maximum input voltage of 5.5V, ROHM recommends limiting the input voltage to 5V to ensure reliable operation and prevent damage to the device.
  • Yes, the RD3U080AAFRATL is suitable for high-frequency switching applications up to 1MHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a snubber circuit to reduce ringing and EMI.
  • The POR and BOR functions are designed to reset the device during power-up and brown-out conditions. Ensure that the power supply is stable and within the recommended voltage range to prevent unwanted resets. You can also use external circuitry to filter out noise and glitches.

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RD3U080AAFRATL Overview

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