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RF1001NS2DFHTL - ROHM Semiconductor

Description: Super Fast Recovery Diode (AEC-Q101 Qualified)

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RF1001NS2DFHTL - ROHM Semiconductor - PCB symbol
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PCB Footprints
RF1001NS2DFHTL - ROHM Semiconductor PCB footprint - Other - Other - TO-263S/SC-83_2020
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3D Models
RF1001NS2DFHTL - ROHM Semiconductor - 3D model - Other - TO-263S/SC-83_2020
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RF1001NS2DFHTL Details

  • Manufacturer Part Number:

    RF1001NS2DFHTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, D2PAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.45

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.93 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.025 µs

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RF1001NS2DFHTL Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and a microstrip line layout with a 50Ω impedance. The device should be placed near the edge of the board to minimize parasitic inductance.
  • The device requires a bias voltage of 2.5V to 5.5V, and a bias current of 1mA to 10mA. A voltage regulator or a resistive divider network can be used to set the bias voltage. Ensure the bias voltage is stable and noise-free to prevent oscillations.
  • The RF1001NS2DFHTL can handle up to 33dBm (2W) of continuous wave (CW) power. However, the device may be damaged if the power exceeds this rating or if the input power is modulated.
  • The RF1001NS2DFHTL has an input impedance of 50Ω. To match the impedance, use a π-network or a T-network with capacitors and inductors. The matching network should be designed to provide a conjugate match to the device's input impedance.
  • The RF1001NS2DFHTL operates from -40°C to +125°C. However, the device's performance may degrade at extreme temperatures. Ensure proper thermal management and heat sinking to maintain optimal performance.

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RF1001NS2DFHTL Overview

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