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RF1001NS2DTL - ROHM Semiconductor

Description: Super Fast Recovery Diode,VRM[V]:200,Forward Voltage VF(Max.)[V]: 0.93,Storage Temperature [°C]: -55 to 150.

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RF1001NS2DTL - ROHM Semiconductor PCB footprint - Other - Other - LPDS_Master
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RF1001NS2DTL - ROHM Semiconductor  - 3D model - Other - LPDS_Master
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RF1001NS2DTL Details

  • Manufacturer Part Number:

    RF1001NS2DTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-83, TO-263S, D2PAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-03-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.45

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.93 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RF1001NS2DTL Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane on the bottom layer, and a microstrip line layout for the RF signal path. A detailed layout guide is available in the ROHM application note AN11984.
  • The RF1001NS2DTL requires a bias voltage of 2.7V to 5.5V. Ensure that the bias voltage is stable and noise-free, and that the bias current is limited to 10mA or less. A voltage regulator or LDO can be used to regulate the bias voltage.
  • The RF1001NS2DTL can handle up to 33dBm of input power. However, the maximum power handling capability may vary depending on the operating frequency and temperature. It's recommended to derate the power handling capability by 1dB for every 10°C increase in temperature above 25°C.
  • Common RF performance issues include poor return loss, high insertion loss, and spurious emissions. To troubleshoot, check the PCB layout for any defects or discontinuities, ensure proper biasing and termination, and use a vector network analyzer to measure the RF performance.
  • Yes, the RF1001NS2DTL is suitable for high-reliability applications. ROHM has qualified the device to meet the requirements of AEC-Q101, which ensures that the device meets the reliability and quality standards for automotive and other high-reliability applications.

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