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RF1005TF6SC9 - ROHM Semiconductor

Description: Fast Recovery Diode

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PCB Footprints
RF1005TF6SC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220NFM
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3D Models
RF1005TF6SC9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO220NFM
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RF1005TF6SC9 Details

  • Manufacturer Part Number:

    RF1005TF6SC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-12-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RF1005TF6SC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and a microstrip line layout with a 50Ω impedance. The device should be placed near the edge of the board to minimize parasitic inductance.
  • The device requires a bias voltage of 2.85V to 5.5V, and a bias current of 10mA to 50mA. A voltage regulator or a bias tee can be used to provide a stable bias voltage. Additionally, a resistor and capacitor can be used to filter the bias voltage.
  • The device can handle a maximum input power of 33dBm (2W) at 2.4GHz. However, the power handling capability may vary depending on the operating frequency, temperature, and other environmental factors.
  • Common issues can be troubleshooted by checking the PCB layout, bias voltage, and input/output matching. Ensure that the device is properly biased, and the input/output impedances are matched to 50Ω. Also, check for any signs of overheating, which can affect the device's performance.
  • The device is rated for operation up to 125°C, but the performance may degrade at high temperatures. ROHM recommends derating the power handling capability and ensuring proper heat sinking to prevent overheating.

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RF1005TF6SC9 Overview

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