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RF1005TF6SFHC9 - ROHM Semiconductor

Description: Fast Recovery Diode (AEC-Q101 Qualified) Diode Standard 600 V 10A Through Hole TO-220NFM

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RF1005TF6SFHC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220NFM
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3D Models
RF1005TF6SFHC9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO220NFM
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RF1005TF6SFHC9 Details

  • Manufacturer Part Number:

    RF1005TF6SFHC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RF1005TF6SFHC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. A dedicated ground pin should be connected to the ground plane using a via. Additionally, it's recommended to use a 50Ω microstrip line for the RF signal path.
  • The RF1005TF6SFHC9 requires a bias voltage of 2.7V to 5.5V. Ensure that the bias voltage is stable and noise-free. A decoupling capacitor of 10nF to 100nF should be placed close to the VCC pin to filter out noise. Additionally, the bias voltage should be applied before the RF signal is applied.
  • The RF1005TF6SFHC9 can handle a maximum input power of +20dBm (100mW). Exceeding this power limit may cause damage to the device or affect its performance.
  • To troubleshoot issues, check the PCB layout for any defects or inconsistencies. Ensure that the bias voltage is stable and within the recommended range. Verify that the RF signal path is properly matched and terminated. Use a spectrum analyzer to measure the output signal and identify any spurious signals or noise. Consult the ROHM application note for more detailed troubleshooting guidelines.
  • The RF1005TF6SFHC9 is rated for operation up to 85°C. However, the device's performance may degrade at higher temperatures. If your application requires operation above 85°C, consult with ROHM or consider using a different device.

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