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RF4E060AJTCR - ROHM Semiconductor

Description: Nch 30V 6A Middle Power MOSFET

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PCB Footprints
RF4E060AJTCR - ROHM Semiconductor PCB footprint - Other - Other - HUML2020L8(H=0.65mm)_2022
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3D Models
RF4E060AJTCR - ROHM Semiconductor  - 3D model - Other - HUML2020L8(H=0.65mm)_2022
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RF4E060AJTCR Details

  • Manufacturer Part Number:

    RF4E060AJTCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020-8S, 6 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-08-19

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    3 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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RF4E060AJTCR Overview

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