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RF4E070GNTR - ROHM Semiconductor

Description: 4.5V Drive Nch MOSFET

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PCB Footprints
RF4E070GNTR - ROHM Semiconductor PCB footprint - Other - Other - DFN2020-8S_2022-6
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3D Models
RF4E070GNTR - ROHM Semiconductor  - 3D model - Other - DFN2020-8S_2022-6
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RF4E070GNTR Details

  • Manufacturer Part Number:

    RF4E070GNTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4E070GNTR Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and a microstrip line design for the RF signal path. A dedicated ground via near the device's ground pin is also recommended to reduce noise and improve performance.
  • The RF4E070GNTR requires a bias voltage of 2.7V to 5.5V. Ensure the bias voltage is stable and noise-free, and that the device is operated within the recommended operating conditions. A voltage regulator or a low-dropout regulator (LDO) can be used to provide a stable bias voltage.
  • The RF4E070GNTR can handle a maximum input power of +20 dBm. Exceeding this power limit may cause damage to the device or affect its performance. Ensure the input power is within the recommended range to maintain optimal performance and device reliability.
  • Common issues with the RF4E070GNTR can be troubleshooted by checking the PCB layout, ensuring proper biasing, and verifying the input signal quality. Also, check for any signs of damage, such as overheating or physical stress. Consult the datasheet and application notes for more detailed troubleshooting guidelines.
  • The RF4E070GNTR is optimized for frequencies up to 6 GHz. While it may still operate at higher frequencies, its performance may degrade. For high-frequency applications above 6 GHz, consider using a different device or consulting with ROHM's application engineers for guidance.

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RF4E070GNTR Overview

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