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RF4E080BNTR - ROHM Semiconductor

Description: N-Channel 30 V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8

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Symbol
RF4E080BNTR - ROHM Semiconductor - PCB symbol
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PCB Footprints
RF4E080BNTR - ROHM Semiconductor PCB footprint - Other - Other - RF4E080BNTR
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RF4E080BNTR - ROHM Semiconductor - 3D model - Other - RF4E080BNTR
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RF4E080BNTR Details

  • Manufacturer Part Number:

    RF4E080BNTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0246 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4E080BNTR Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from noise sources. Use a 50-ohm microstrip line for the RF output.
  • Use a voltage regulator to ensure a stable 3.3V supply. Decouple the power pins with 10uF and 100nF capacitors. Ensure the bias resistors are correctly sized to set the desired output power.
  • The RF4E080BNTR can operate from -40°C to 85°C. However, the device's performance may degrade at extreme temperatures. Ensure proper thermal management and heat sinking to maintain optimal performance.
  • Use a spectrum analyzer to measure the output power and frequency. Check the biasing and power supply connections. Verify the PCB layout and ensure that the device is properly soldered.
  • Yes, the RF4E080BNTR can be used in switching power amplifier applications. However, ensure that the device is properly biased and that the switching frequency is within the device's operating range.

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RF4E080BNTR Overview

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