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RF4E080GNTR - ROHM Semiconductor

Description: MOSFET 4.5V Drive Nch MOSFET

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RF4E080GNTR - ROHM Semiconductor PCB footprint - Other - Other - RF4E080GNTR-1
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RF4E080GNTR - ROHM Semiconductor  - 3D model - Other - RF4E080GNTR-1
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RF4E080GNTR Details

  • Manufacturer Part Number:

    RF4E080GNTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HUML2020L8, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0228 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4E080GNTR Frequently Asked Questions (FAQs)

  • ROHM provides a recommended PCB layout in the application note AN191, which includes guidelines for component placement, routing, and grounding to minimize noise and ensure optimal performance.
  • The RF4E080GNTR has a thermal pad on the bottom of the package, which should be connected to a thermal ground plane on the PCB to dissipate heat. Additionally, a heat sink or thermal interface material can be used to further improve thermal management.
  • The RF4E080GNTR is rated for operation from -40°C to 125°C, but the maximum junction temperature (Tj) should not exceed 150°C to ensure reliability and prevent damage.
  • To ensure EMC, follow proper PCB design and layout guidelines, use shielding and filtering as necessary, and ensure that the device is properly decoupled and bypassed. Additionally, ROHM provides EMC-related information in the application note AN191.
  • The RF4E080GNTR should be stored in a dry, cool place, away from direct sunlight and moisture. Handling should be done with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent damage from electrostatic discharge.

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RF4E080GNTR Overview

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