Part Image

RF4G060ATTCR - ROHM Semiconductor

Description: Pch -40V -6A Power, DFN2020, MOSFET

Download RF4G060ATTCR Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
RF4G060ATTCR - ROHM Semiconductor PCB footprint - Other - Other - DFN2020-8S_2022
click to zoom
3D Models
RF4G060ATTCR - ROHM Semiconductor  - 3D model - Other - DFN2020-8S_2022
click to zoom

RF4G060ATTCR Details

  • Manufacturer Part Number:

    RF4G060ATTCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020-8S, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Date Of Intro:

    2020-11-05

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    2.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4G060ATTCR Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from noisy digital signals. Use a 50-ohm microstrip line for the RF output.
  • Ensure good thermal conductivity by attaching the device to a heat sink or a metal pad on the PCB. Avoid overheating by keeping the device away from high-power components and ensuring good airflow.
  • The recommended input impedance is 50 ohms, and the output impedance is 50 ohms or lower. Impedance matching is crucial for optimal power transfer and minimal signal reflection.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output lines. Ensure the PCB design includes a clear path for ESD discharge to ground.
  • Use a 10uF ceramic capacitor and a 100nF ceramic capacitor in parallel, placed as close as possible to the device's power pins. This ensures stable power supply and minimizes noise.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RF4G060ATTCR Overview

Use the download button to access the RF4G060ATTCR schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RF4G0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to RF4G060ATTCR

Showing 0 results