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RF4L070BGTCR - ROHM Semiconductor

Description: Nch Power MOSFET,VDSS: 60V,RDS(on)(Max.): 27mΩ,ID: ±7.0A,PD 2.0W,DFN2020-8S.

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RF4L070BGTCR - ROHM Semiconductor - PCB symbol
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RF4L070BGTCR - ROHM Semiconductor PCB footprint - Other - Other - RF4L070BGTCR
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RF4L070BGTCR Details

  • Manufacturer Part Number:

    RF4L070BGTCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020-8S, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RF4L070BGTCR Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a dedicated ground plane, and a microstrip line layout for the RF signal path. A detailed layout guide can be found in ROHM's application note AN1181.
  • The RF4L070BGTCR requires a bias voltage of 2.7V to 5.5V. Ensure the bias voltage is stable and noise-free, and that the device is operated within the recommended operating conditions. A voltage regulator or a low-dropout regulator (LDO) can be used to provide a stable bias voltage.
  • The RF4L070BGTCR can handle a maximum input power of +20 dBm. Exceeding this power limit may cause damage to the device or affect its performance.
  • Impedance matching can be achieved using a pi-network or a T-network topology. ROHM provides a recommended impedance matching circuit in the datasheet, and also offers a impedance matching tool on their website.
  • The RF4L070BGTCR operates over a temperature range of -40°C to +85°C. However, the device's performance may vary depending on the operating temperature, and it's recommended to consult the datasheet for temperature-related specifications.

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RF4L070BGTCR Overview

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