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RF505TF6S - ROHM Semiconductor

Description: Fast Recovery Diode

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PCB Footprints
RF505TF6S - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220NFM (2PIN
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3D Models
RF505TF6S - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220NFM (2PIN
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RF505TF6S Details

  • Manufacturer Part Number:

    RF505TF6S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SFM

  • Package Description:

    TO-220NFM, 2 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220

  • JESD-30 Code:

    R-PSFM-T2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Recovery Time-Max:

    0.03 µs

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RF505TF6S Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and a microstrip line layout for the RF signal path. The datasheet provides a recommended PCB layout, but it's essential to follow good RF design practices, such as minimizing trace lengths, using 50Ω impedance matching, and avoiding vias and stubs in the signal path.
  • The RF505TF6S requires a bias voltage of 2.7V to 5.5V, and a bias current of 1.5mA to 3.5mA. Ensure the bias voltage is stable and noise-free, and use a low-dropout regulator (LDO) or a dedicated bias circuit to minimize noise and ripple. Also, follow the recommended bias circuit configuration in the datasheet.
  • The RF505TF6S can handle up to 33dBm (2W) of continuous wave (CW) power, but it's essential to consider the device's thermal characteristics and ensure proper heat sinking to prevent overheating. ROHM recommends a maximum junction temperature of 150°C.
  • Common issues with the RF505TF6S can be caused by improper biasing, poor PCB layout, or incorrect component selection. Troubleshoot by checking the bias voltage and current, ensuring proper impedance matching, and verifying the PCB layout. Also, check for signs of overheating, and ensure the device is properly soldered and handled.
  • While the RF505TF6S is specified up to 6GHz, it can be used in higher frequency applications with some limitations. However, the device's performance may degrade above 6GHz, and it's essential to evaluate the device's characteristics and performance in your specific application. ROHM recommends consulting their application notes and seeking guidance from their technical support team.

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RF505TF6S Overview

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