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RFD14N05L - onsemi

Description: UIS Rating Curve; Peak Current vs Pulse Width Curve; Temperature Compensating PSPICE® Model; rDS(ON)= 0.100Ω; Related Literature  - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”; 175°C Operating Temperature; Can be Driven Directly from CMOS, NMOS, andTTL Circuits; 14A, 50V

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PCB Footprints
RFD14N05L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
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3D Models
RFD14N05L - onsemi  - 3D model - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O
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RFD14N05L Details

  • Manufacturer Part Number:

    RFD14N05L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    TO-251, 3 PIN

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD14N05L Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the RFD14N05L is 175°C. Exceeding this temperature can lead to device failure.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good thermal contact between the device and the heat sink.
  • The recommended gate resistor value for the RFD14N05L is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the RFD14N05L is suitable for high-reliability applications, but it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the RFD14N05L from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is properly grounded during handling and assembly.

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RFD14N05L Overview

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Part Image RFD14N05_NL Rochester Electronics LLC

14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN

Part Image MTP15N05L Motorola Semiconductor Products

Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image RFD14N05_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image RFP14N05L Harris Semiconductor

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image SPU14N05 Infineon Technologies AG

Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

For a full list of alternate parts for RFD14N05L, check out Findchips.com