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RFD14N05LSM - onsemi

Description: Can be Driven Directly from CMOS, NMOS, andTTL Circuits; Peak Current vs Pulse Width Curve; 14A, 50V; Related Literature  - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”; rDS(ON)= 0.100Ω; 175°C Operating Temperature; UIS Rating Curve; Temperature Compensating PSPICE® Model

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RFD14N05LSM - onsemi - PCB symbol
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PCB Footprints
RFD14N05LSM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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3D Models
RFD14N05LSM - onsemi - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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RFD14N05LSM Details

  • Manufacturer Part Number:

    RFD14N05LSM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD14N05LSM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the RFD14N05LSM is -55°C to 150°C.
  • To ensure proper biasing, the RFD14N05LSM requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 55V. Additionally, the gate current (Ig) should be limited to 100mA or less.
  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The thermal pad should be connected to a copper plane on the PCB, and the heat sink should be attached to the top of the device. Additionally, the PCB should be designed to minimize thermal resistance and ensure good heat dissipation.
  • To protect the RFD14N05LSM from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Additionally, the device should be connected to a ground plane on the PCB to prevent ESD damage.
  • The recommended gate resistor value for the RFD14N05LSM is between 1kΩ and 10kΩ. This value should be chosen based on the specific application requirements and the desired switching speed.

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RFD14N05LSM Overview

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RFD14N05LSM Alternates

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Part Image RFD14N05LSM Rochester Electronics LLC

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Part Image RFD14N05LSM Fairchild Semiconductor Corporation

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Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image RFD14N05LSM Harris Semiconductor

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For a full list of alternate parts for RFD14N05LSM, check out Findchips.com