Please enter a minimum 3 letters or numbers
Technical Content
Part Image

RFD14N05LSM9A - onsemi

Description: N-Channel 50 V 14A (Tc) 48W (Tc) Surface Mount TO-252AA -55°C ~ 175°C

Download RFD14N05LSM9A Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
RFD14N05LSM9A - onsemi - PCB symbol
click to zoom
PCB Footprints
RFD14N05LSM9A - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2026-1.11
click to zoom
3D Models
RFD14N05LSM9A - onsemi - 3D model - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2026-1.11
click to zoom

RFD14N05LSM9A Details

  • Manufacturer Part Number:

    RFD14N05LSM9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD14N05LSM9A Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the RFD14N05LSM9A is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value for the RFD14N05LSM9A is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the RFD14N05LSM9A is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the RFD14N05LSM9A from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use ESD-protective packaging and materials during storage and transportation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RFD14N05LSM9A Overview

Use the download button to access the RFD14N05LSM9A schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RFD14, or try a keyword search, such as Power Field-Effect Transistors

Parts related to RFD14N05LSM9A

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

RFD14N05LSM9A Alternates

Showing results

Image Part Number Model
Part Image RFD14N05LSM Rochester Electronics LLC

14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN
Part Image RFD14N05LSM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image RFD14N05LSM9A Harris Semiconductor

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image RFD14N05LSM9A_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image RFD14N05LSM Harris Semiconductor

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
For a full list of alternate parts for RFD14N05LSM9A, check out Findchips.com