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RFD14N05SM9A - onsemi

Description: 175°C Operating Temperature; Related Literature  - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”; Peak Current vs Pulse Width Curve; rDS(ON)= 0.100Ω; UIS Rating Curve; 14A, 50V; Temperature Compensating PSPICE® Model

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RFD14N05SM9A - onsemi PCB footprint - Other - Other - RFD14N05SM9A-2
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RFD14N05SM9A Details

  • Manufacturer Part Number:

    RFD14N05SM9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD14N05SM9A Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the RFD14N05SM9A is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material (TIM) to reduce thermal resistance.
  • The recommended gate drive voltage for the RFD14N05SM9A is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the RFD14N05SM9A is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the RFD14N05SM9A from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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RFD14N05SM9A Overview

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Part Image RFD14N05SM Rochester Electronics LLC

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Part Image RFD14N05SM9A Fairchild Semiconductor Corporation

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Part Image 2SK2018-01S Fuji Electric Co Ltd

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Part Image RFD14N05SM Fairchild Semiconductor Corporation

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Part Image MTD3055E Texas Instruments

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