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RFM01U7P(TE12L,F) - Toshiba

Description: RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 0.1A 3W 20V

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RFM01U7P(TE12L,F) - Toshiba PCB footprint - Other - Other - RFM01U7P(TE12L,F)-2
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3D Models
RFM01U7P(TE12L,F) - Toshiba  - 3D model - Other - RFM01U7P(TE12L,F)-2
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RFM01U7P(TE12L,F) Details

  • Manufacturer Part Number:

    RFM01U7P(TE12L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    1 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Surface Mount:

    YES

RFM01U7P(TE12L,F) Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the RFM01U7P is 2.7V to 5.5V.
  • To ensure reliable data transmission, ensure that the transmission frequency is within the specified range, the transmission power is set correctly, and the antenna is properly connected and matched to the module.
  • The maximum data transfer rate of the RFM01U7P is 115.2 kbps.
  • The RFM01U7P can be configured for different frequency bands by setting the appropriate register values using the SPI interface. Refer to the datasheet for specific register settings for each frequency band.
  • The typical current consumption of the RFM01U7P is around 12mA in transmit mode and 2mA in receive mode.

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RFM01U7P(TE12L,F) Overview

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