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RFN10NS8DTL - ROHM Semiconductor

Description: Super Fast Recovery Diode,VRM[V]:800,Average Rectified Forward Current IO[A]:10,Storage Temperature: -55 TO 150 °C.

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RFN10NS8DTL - ROHM Semiconductor PCB footprint - Other - Other - LPTS_Master
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RFN10NS8DTL - ROHM Semiconductor  - 3D model - Other - LPTS_Master
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RFN10NS8DTL Details

  • Manufacturer Part Number:

    RFN10NS8DTL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, SC-83, TO-263S, D2PAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.1 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RFN10NS8DTL Frequently Asked Questions (FAQs)

  • ROHM provides a recommended PCB layout in their application note AN0914, which includes guidelines for pad layout, thermal vias, and copper pouring to minimize thermal resistance and ensure reliable operation.
  • To ensure reliability, follow ROHM's recommended derating guidelines for temperature and power dissipation. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowable power dissipation for RFN10NS8DTL is dependent on the ambient temperature and the thermal resistance of the system. ROHM provides a power dissipation derating curve in the datasheet, which should be consulted to determine the maximum allowable power dissipation for a specific application.
  • Yes, RFN10NS8DTL can be used in switching regulator applications. However, it's essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency and duty cycle are within the recommended limits to prevent overheating and ensure reliable operation.
  • To protect RFN10NS8DTL from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that all equipment and tools are properly grounded. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

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RFN10NS8DTL Overview

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