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RFN10T2DNZC9 - ROHM Semiconductor

Description: Super Fast Recovery Diode

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PCB Footprints
RFN10T2DNZC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FN(3PIN)
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3D Models
RFN10T2DNZC9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220FN(3PIN)
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RFN10T2DNZC9 Details

  • Manufacturer Part Number:

    RFN10T2DNZC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220FN, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-11-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.98 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN10T2DNZC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the input and output traces as short as possible. Additionally, it's essential to follow the recommended land pattern and thermal via structure to ensure proper heat dissipation.
  • To ensure stability, it's crucial to follow the recommended input and output capacitor values, and to place them as close to the IC as possible. Additionally, the input voltage should be well-regulated, and the output should be decoupled with a capacitor of at least 10uF.
  • The maximum ambient temperature for the RFN10T2DNZC9 is 105°C. However, it's essential to consider the thermal resistance and power dissipation to ensure the junction temperature does not exceed 150°C.
  • Yes, the RFN10T2DNZC9 is suitable for high-reliability applications. ROHM Semiconductor has implemented various quality control measures, including burn-in testing and 100% visual inspection, to ensure the device meets the required standards.
  • The thermal shutdown feature is designed to protect the device from overheating. When the junction temperature exceeds 150°C, the device will shut down. To handle this feature, it's essential to implement a thermal management strategy, such as heat sinking or airflow, to keep the junction temperature within the recommended range.

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RFN10T2DNZC9 Overview

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