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RFN10TF6S - ROHM Semiconductor

Description: Fast Recovery Diode

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Symbol
RFN10TF6S - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFN10TF6S - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220NFM
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3D Models
RFN10TF6S - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-220NFM
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RFN10TF6S Details

  • Manufacturer Part Number:

    RFN10TF6S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.55 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.05 µs

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN10TF6S Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a solid ground plane, short and wide traces, and a decoupling capacitor (e.g., 100nF) close to the device. A 4-layer PCB with a dedicated power plane and a separate ground plane is also recommended.
  • The RFN10TF6S requires a bias voltage (VCC) between 2.7V and 5.5V. Ensure the bias voltage is stable and within the recommended range. A voltage regulator or a low-dropout regulator (LDO) can be used to regulate the bias voltage.
  • The RFN10TF6S can handle a maximum power of 10W. However, the actual power handling capability depends on the operating frequency, PCB layout, and thermal management. It's essential to ensure proper thermal management and heat dissipation to prevent overheating.
  • The selection of external components, such as resistors, capacitors, and inductors, depends on the specific application and operating frequency. ROHM provides a recommended component list in the datasheet. Additionally, simulation tools like SPICE or ADS can be used to optimize the component selection.
  • The thermal resistance (Rth) of the RFN10TF6S is 25°C/W. To manage heat dissipation, ensure good thermal contact between the device and the PCB, use a heat sink or a thermal pad, and provide adequate airflow. The maximum junction temperature (Tj) should not exceed 150°C.

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RFN10TF6S Overview

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Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC