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RFN20TF6S - ROHM Semiconductor

Description: Fast Recovery Diode

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PCB Footprints
RFN20TF6S - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220NFM (2PIN)-2
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3D Models
RFN20TF6S - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220NFM (2PIN)-2
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RFN20TF6S Details

  • Manufacturer Part Number:

    RFN20TF6S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.55 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.06 µs

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN20TF6S Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. A microstrip or coplanar waveguide layout is also recommended for the RF signal path.
  • The RFN20TF6S requires a bias voltage of 2.7V to 5.5V. Ensure the bias voltage is stable and noise-free, and that the device is operated within the recommended operating conditions.
  • The RFN20TF6S can handle up to 20 dBm (100 mW) of continuous wave (CW) power. However, it's recommended to derate the power handling capability based on the operating frequency and temperature.
  • Check the PCB layout and ensure it meets the recommended layout guidelines. Verify the bias voltage and current, and check for any signs of overheating or damage. Use a spectrum analyzer to measure the RF signal and noise floor, and consult the datasheet and application notes for troubleshooting guidance.
  • While the RFN20TF6S is specified up to 6 GHz, it may still be usable at higher frequencies with some degradation in performance. However, ROHM does not guarantee performance above 6 GHz, and it's recommended to consult with ROHM's application engineers for high-frequency applications.

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RFN20TF6S Overview

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Part Image RFN20TF6SC9 ROHM Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, TO-220AC