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RFN2LAM4STR - ROHM Semiconductor

Description: Super Fast Recovery Diode

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RFN2LAM4STR - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFN2LAM4STR - ROHM Semiconductor PCB footprint - Other - Other - RFN2LAM4STR-2
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RFN2LAM4STR - ROHM Semiconductor - 3D model - Other - RFN2LAM4STR-2
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RFN2LAM4STR Details

  • Manufacturer Part Number:

    RFN2LAM4STR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-12-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.19

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Current-Max:

    1 µA

  • Reverse Recovery Time-Max:

    0.03 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN2LAM4STR Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. Additionally, it's essential to follow the recommended land pattern and keep the component placement symmetrical to minimize parasitic inductance.
  • The RFN2LAM4STR requires a bias voltage of 1.8V to 3.3V. Ensure that the bias voltage is stable and noise-free, and that the bias current is limited to 10mA or less. Also, make sure to follow the recommended bias circuit configuration and decoupling capacitor values.
  • The RFN2LAM4STR is designed to operate up to 4GHz, but the actual operating frequency may vary depending on the specific application and PCB layout. It's essential to evaluate the device's performance in your specific use case to ensure optimal operation.
  • The RFN2LAM4STR has a maximum junction temperature of 125°C. Ensure good thermal conductivity by using a thermal pad or heat sink, and keep the device away from heat sources. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
  • The RFN2LAM4STR is sensitive to electrostatic discharge (ESD). Ensure that you follow proper ESD handling procedures during assembly and testing, and consider adding external ESD protection devices, such as TVS diodes or ESD arrays, to protect the device from ESD events.

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RFN2LAM4STR Overview

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