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RFN30TS6SGC11 - ROHM Semiconductor

Description: ROHM 600V 30A, Diode, 3-Pin TO-247 RFN30TS6SGC11

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Symbol
RFN30TS6SGC11 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RFN30TS6SGC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247
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3D Models
RFN30TS6SGC11 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO247
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RFN30TS6SGC11 Details

  • Manufacturer Part Number:

    RFN30TS6SGC11

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.55 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    30 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.06 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RFN30TS6SGC11 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the edge of the board to minimize radiation losses. A via-stitched ground plane under the device is also recommended to reduce electromagnetic interference (EMI).
  • The device requires a stable voltage supply of 3.3V ± 10% and a bias current of 10mA to 30mA. A low-dropout linear regulator (LDO) or a switching regulator with a low noise output is recommended to ensure a stable voltage supply. The bias current can be set using a resistor divider network or a dedicated bias circuit.
  • The device can handle a maximum input power of +20dBm (100mW) at 2.4GHz. Exceeding this power limit may cause damage to the device or affect its performance. It is recommended to use an attenuator or a limiter to prevent over-powering the device.
  • The device can be optimized for a specific frequency band by adjusting the external matching components (e.g., capacitors, inductors) to achieve the desired impedance match. A network analyzer or a simulation tool can be used to optimize the matching network for the desired frequency band.
  • The device operates over a temperature range of -40°C to +85°C. However, the device's performance may degrade at extreme temperatures. It is recommended to operate the device within the recommended temperature range for optimal performance.

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RFN30TS6SGC11 Overview

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