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RFN3BGE6STL - ROHM Semiconductor

Description: Diodes - General Purpose, Power, Switching 600V Vrm; 3A Io TO-252 Rec Diode

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PCB Footprints
RFN3BGE6STL - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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3D Models
RFN3BGE6STL - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RFN3BGE6STL Details

  • Manufacturer Part Number:

    RFN3BGE6STL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-252GE, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-11-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Application:

    SUPER FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.55 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    20 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.03 µs

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFN3BGE6STL Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. Additionally, it's essential to follow the recommended land pattern and pad layout to ensure proper thermal dissipation and minimize parasitic inductance.
  • The RFN3BGE6STL requires a bias voltage of 2.5V to 5.5V, and a bias current of 1mA to 10mA. It's essential to use a stable voltage source and to decouple the bias voltage with a capacitor to minimize noise and ensure stable operation.
  • The RFN3BGE6STL can handle a maximum power of 33dBm (2W) at 2.4GHz. However, it's recommended to derate the power handling capability based on the operating frequency, temperature, and other environmental factors to ensure reliable operation.
  • Common issues with the RFN3BGE6STL can be troubleshooted by checking the PCB layout, bias voltage, and signal integrity. Ensure that the signal traces are short and well-matched, and that the bias voltage is stable and within the recommended range. Also, check for any signs of overheating, which can affect the device's performance.
  • The RFN3BGE6STL is rated for operation up to 125°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly heat-sinked and that the operating temperature is within the recommended range to ensure reliable operation.

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RFN3BGE6STL Overview

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