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RFVS8TG6SGC9 - ROHM Semiconductor

Description: Diode Standard 600 V 8A Through Hole TO-220ACFP

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PCB Footprints
RFVS8TG6SGC9 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AC_1
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3D Models
RFVS8TG6SGC9 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-220AC_1
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RFVS8TG6SGC9 Details

  • Manufacturer Part Number:

    RFVS8TG6SGC9

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER HYPER FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    3 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RFVS8TG6SGC9 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. Additionally, it's essential to follow the recommended land pattern and pad layout to ensure proper thermal dissipation and signal integrity.
  • The RFVS8TG6SGC9 requires a bias voltage of 2.5V to 5.5V, and a bias current of 1mA to 10mA. It's essential to use a stable voltage source and to decouple the bias voltage with a capacitor to ensure noise-free operation.
  • The RFVS8TG6SGC9 is designed to operate up to 6 GHz, making it suitable for a wide range of RF and microwave applications, including Wi-Fi, Bluetooth, and cellular networks.
  • The RFVS8TG6SGC9 has a thermal resistance of 25°C/W, and it's essential to provide adequate heat sinking to prevent overheating. ROHM recommends using a thermal pad or a heat sink with a thermal interface material to ensure efficient heat dissipation.
  • The RFVS8TG6SGC9 is designed for low-power applications, with a maximum power rating of 20 dBm. For high-power applications, ROHM recommends using a different device, such as the RFVS10TG6SGC9, which has a higher power rating.

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RFVS8TG6SGC9 Overview

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