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RGW80TS65DGC11 - ROHM Semiconductor

Description: IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT

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RGW80TS65DGC11 - ROHM Semiconductor PCB footprint - Other - Other - TO-247N
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RGW80TS65DGC11 - ROHM Semiconductor  - 3D model - Other - TO-247N
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RGW80TS65DGC11 Details

  • Manufacturer Part Number:

    RGW80TS65DGC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-11-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    78 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    228 ns

  • Turn-on Time-Nom (ton):

    59 ns

RGW80TS65DGC11 Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane and thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended for the top layer. Additionally, a thermal pad on the bottom of the package should be connected to a heat sink or a thermal interface material.
  • To ensure reliable operation in high-temperature environments, it's essential to follow ROHM's recommended derating guidelines for the device. This includes reducing the maximum operating voltage and current as temperature increases. Additionally, consider using a heat sink or thermal interface material to maintain a safe junction temperature.
  • ROHM recommends a peak reflow temperature of 260°C (500°F) with a dwell time of 30 seconds to 1 minute. The device is compatible with lead-free soldering processes, and a nitrogen atmosphere is recommended to prevent oxidation.
  • ROHM recommends following standard ESD handling procedures, including the use of ESD-safe workstations, wrist straps, and packaging materials. The device has an internal ESD protection diode, but external protection measures are still necessary to prevent damage during handling and assembly.
  • ROHM recommends storing the device in a dry, cool place with a temperature range of -10°C to 30°C (14°F to 86°F) and humidity below 60%. The device should be stored in its original packaging or an ESD-safe container to prevent damage.

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