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RHRG5060 - onsemi

Description: Avalanche Energy Rated; 600V Reverse Voltage and High Reliability; RoHS compliant; Hyperfast recovery Trr = 50ns (@IF= 50A); Max Forward Voltage, VF = 2.1V (@ TC = 25°C)

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PCB Footprints
RHRG5060 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - RHRG5060
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RHRG5060 - onsemi  - 3D model - Transistor Outline, Vertical - RHRG5060
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RHRG5060 Details

  • Manufacturer Part Number:

    RHRG5060

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-2

  • Manufacturer Package Code:

    340CL

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

  • Application:

    HYPERFAST SOFT RECOVERY

  • Breakdown Voltage-Min:

    600 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    500 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    50 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    250 µA

  • Reverse Recovery Time-Max:

    0.05 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RHRG5060 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the RHRG5060, the SOA is limited by the maximum voltage (Vds) of 600V, maximum current (Id) of 5A, and maximum power dissipation (Pd) of 75W.
  • Use a robust EOS protection scheme, including TVS diodes, resistors, and capacitors, to limit voltage and current transients. Also, ensure proper PCB layout and routing to minimize parasitic inductance and capacitance.
  • A gate drive circuit with a high-current, low-impedance driver and a suitable gate resistor (e.g., 10-20 ohms) is recommended. The driver should be able to provide a peak current of at least 1A to ensure reliable switching.

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RHRG5060 Overview

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Part Image RHRG5060_NL Fairchild Semiconductor Corporation

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, TO-247