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RJ1G12BGNTLL - ROHM Semiconductor

Description: MOSFET 40V N-CHANNEL 120A-1

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RJ1G12BGNTLL - ROHM Semiconductor PCB footprint - Other - Other - RJ1G12BGNTLL-1
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RJ1G12BGNTLL Details

  • Manufacturer Part Number:

    RJ1G12BGNTLL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-07-21

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    117 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.00208 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RJ1G12BGNTLL Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 3mm clearance around the device is also recommended to prevent thermal interference.
  • To ensure reliability, ROHM recommends operating the device within the specified temperature range (-55°C to 150°C). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow to prevent overheating.
  • The maximum allowed voltage for Vgs is ±20V. Exceeding this voltage may damage the device or affect its reliability.
  • Yes, the RJ1G12BGNTLL is suitable for high-frequency switching applications. However, ensure that the device is properly driven, and the PCB layout is optimized to minimize parasitic inductance and capacitance.
  • To prevent ESD damage, handle the device with an anti-static wrist strap or mat, and ensure that the assembly process is ESD-controlled. Avoid touching the device's pins or exposing it to static electricity.

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RJ1G12BGNTLL Overview

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