RJ1P12BBDTLL footprint, schematic symbol and 3D model by ROHM Semiconductor

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RJ1P12BBDTLL - ROHM Semiconductor PCB footprint - Other - Other - RJ1P12BBDTLL-2

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Datasheet Download Datasheet
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Part Number RJ1P12BBDTLL
Manufacturer ROHM Semiconductor
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - RJ1P12BBDTLL-2
Released Date Feb 24, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

RJ1P12BBDTLL Details

Manufacturer Part Number:
RJ1P12BBDTLL
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
ECCN Code:
EAR99
Factory Lead Time:
21 Weeks
Date Of Intro:
2018-05-31
Manufacturer:
ROHM Semiconductor
YTEOL:
3
Avalanche Energy Rating (Eas):
125 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
120 A
Drain-source On Resistance-Max:
0.0058 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
240 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

RJ1P12BBDTLL Frequently Asked Questions (FAQs)

The recommended operating temperature range for RJ1P12BBDTLL is -40°C to 125°C.
To ensure reliability, follow the recommended derating guidelines for voltage and current, and consider using a heat sink or thermal management system to keep the junction temperature below 125°C.
The maximum allowable power dissipation for RJ1P12BBDTLL is 1.5W, but this value may vary depending on the operating temperature and thermal resistance of the system.
Yes, RJ1P12BBDTLL is suitable for switching regulator applications due to its low voltage drop and fast switching characteristics. However, ensure that the device is properly biased and that the switching frequency is within the recommended range.
To protect RJ1P12BBDTLL from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection circuits in the system design.

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