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RM30N100T2 - Rectron

Description: 100V 30A N-channel MOSFET with low RDS(ON), high ESD, and avalanche-rated for power switching and UPS applications.

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PCB Footprints
RM30N100T2 - Rectron PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3L-2025
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3D Models
RM30N100T2 - Rectron  - 3D model - Transistor Outline, Vertical - TO-220-3L-2025
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RM30N100T2 Details

  • Manufacturer Part Number:

    RM30N100T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220-3L, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Rectron Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    256 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    250 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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RM30N100T2 Overview

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