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RN1106MFV,L3F - Toshiba

Description: Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

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PCB Footprints
RN1106MFV,L3F - Toshiba PCB footprint - Other - Other - RN1106MFV,L3F-2
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3D Models
RN1106MFV,L3F - Toshiba  - 3D model - Other - RN1106MFV,L3F-2
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RN1106MFV,L3F Details

  • Manufacturer Part Number:

    RN1106MFV,L3F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RN1106MFV,L3F Frequently Asked Questions (FAQs)

  • The recommended land pattern for the RN1106MFV,L3F is a rectangle with a length of 2.5mm and a width of 1.6mm, with a thermal pad in the center.
  • To ensure reliability in high-temperature applications, it is recommended to derate the power dissipation of the RN1106MFV,L3F according to the temperature derating curve provided in the datasheet, and to ensure good thermal design and heat sinking.
  • The maximum allowable voltage for the RN1106MFV,L3F is 36V, although the recommended operating voltage is 12V or 24V depending on the application.
  • To prevent damage, it is recommended to handle the RN1106MFV,L3F by the body of the device, avoiding touching the leads or electrical contacts. It is also recommended to store the devices in a dry, cool place, away from direct sunlight and moisture.
  • The RN1106MFV,L3F has a human body model (HBM) ESD rating of 2kV, and a machine model (MM) ESD rating of 200V.

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RN1106MFV,L3F Overview

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