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RN1130MFV - Toshiba

Description: NPN Bias Resistor Built-in Transistors (BRT), 100 kΩ/100 kΩ, SOT-723(VESM)

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PCB Footprints
RN1130MFV - Toshiba PCB footprint - Other - Other - 1-1Q1S_2-1L1S
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3D Models
RN1130MFV - Toshiba  - 3D model - Other - 1-1Q1S_2-1L1S
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RN1130MFV Details

  • Manufacturer Part Number:

    RN1130MFV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

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