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RN1707JE(TE85L,F) - Toshiba

Description: NPN X 2 BRT, Q1BSR=10K?, Q1BER=4

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RN1707JE(TE85L,F) - Toshiba - PCB symbol
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PCB Footprints
RN1707JE(TE85L,F) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2-2P1D
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3D Models
RN1707JE(TE85L,F) - Toshiba - 3D model - SO Transistor Flat Lead - 2-2P1D
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RN1707JE(TE85L,F) Details

  • Manufacturer Part Number:

    RN1707JE(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 4.7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    6 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-F5

  • Number of Elements:

    2

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.1 W

  • Power Dissipation-Max (Abs):

    0.1 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

RN1707JE(TE85L,F) Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Implement a heat sink or thermal management system, and ensure the device is operated within the recommended temperature range (TJ = -40°C to 150°C).
  • The maximum allowed voltage for the input pins is VCC + 0.3V, but it's recommended to keep it within VCC + 0.1V for reliable operation.
  • Yes, but be aware of the device's switching characteristics and ensure the layout is optimized for high-frequency operation. Additionally, consider the device's power dissipation and thermal management.
  • Implement ESD protection measures such as TVS diodes, ESD protection ICs, or ESD-resistant design practices to prevent damage from electrostatic discharge.

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RN1707JE(TE85L,F) Overview

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