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RQ3E150GNTB - ROHM Semiconductor

Description: MOSFET 4.5V Drive Nch MOSFET

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PCB Footprints
RQ3E150GNTB - ROHM Semiconductor PCB footprint - Other - Other - HSMT8_1
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3D Models
RQ3E150GNTB - ROHM Semiconductor  - 3D model - Other - HSMT8_1
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RQ3E150GNTB Details

  • Manufacturer Part Number:

    RQ3E150GNTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HSMT8, 8 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RQ3E150GNTB Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, and to use thermal vias to dissipate heat to the bottom layer. Additionally, keeping the thermal pad away from other components and ensuring good airflow around the device can also help.
  • To ensure the device is properly biased, make sure to follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the input and output capacitors are properly selected and placed close to the device to minimize parasitic inductance.
  • When handling the device, take precautions to prevent electrostatic discharge (ESD) damage by using an ESD wrist strap or mat, and avoid touching the device's pins or leads. Also, avoid bending or flexing the leads, and handle the device by the body or pins, not the leads.
  • To troubleshoot issues with the device, start by checking the input voltage and current, and ensure that the device is properly biased. Check for any signs of physical damage or overheating, and verify that the PCB layout and thermal design are correct. If the issue persists, consult the datasheet and application notes for guidance.
  • The RQ3E150GNTB has a typical lifespan of 10-15 years, depending on operating conditions and usage. The device is designed to meet the reliability standards of the automotive industry, with a failure rate of less than 10 FIT (failures per billion hours) at 125°C.

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RQ3E150GNTB Overview

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