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RQ6E030ATTCR - ROHM Semiconductor

Description: Pch -30V -3A Middle Power MOSFET

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RQ6E030ATTCR - ROHM Semiconductor PCB footprint - Other - Other - TSMT6_1
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3D Models
RQ6E030ATTCR - ROHM Semiconductor  - 3D model - Other - TSMT6_1
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RQ6E030ATTCR Details

  • Manufacturer Part Number:

    RQ6E030ATTCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSMT6, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.15

  • Avalanche Energy Rating (Eas):

    3.3 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RQ6E030ATTCR Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 1oz copper thickness is also recommended.
  • The RQ6E030ATTCR requires a bias voltage of 3.3V ± 10% on the VCC pin, and a bias current of 1mA to 10mA on the VREF pin. Ensure that the bias voltage and current are within the recommended specifications to achieve optimal performance.
  • The maximum allowed power dissipation for the RQ6E030ATTCR is 1.5W. Exceeding this limit can cause the device to overheat, leading to reduced performance or even damage.
  • The RQ6E030ATTCR is rated for operation up to 125°C. However, the device's performance and reliability may degrade at higher temperatures. Ensure that the device is properly heat-sinked and that the operating temperature is within the recommended specifications.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to prevent damage from electrostatic discharge. Ensure that the ESD protection devices are rated for the maximum voltage and current of the application.

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RQ6E030ATTCR Overview

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