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RS1E200BNTB - ROHM Semiconductor

Description: ROHM - RS1E200BNTB.. - MOSFET, N-CH, 30V, 20A, HSOP-8

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PCB Footprints
RS1E200BNTB - ROHM Semiconductor PCB footprint - Other - Other - HSOP8(5X6)_1
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3D Models
RS1E200BNTB - ROHM Semiconductor  - 3D model - Other - HSOP8(5X6)_1
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RS1E200BNTB Details

  • Manufacturer Part Number:

    RS1E200BNTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HSOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RS1E200BNTB Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, avoid overheating during soldering, and follow the recommended storage and handling procedures to prevent thermal stress. Also, consider using a thermally conductive interface material between the device and heat sink.
  • Although the datasheet specifies a maximum gate-source voltage of ±20V, it's recommended to limit the gate voltage to ±15V to ensure reliable operation and prevent damage to the internal gate oxide.
  • Yes, the RS1E200BNTB is suitable for high-frequency switching applications up to 100kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Handle the device with ESD-protective equipment, such as wrist straps and mats. Ensure the PCB has ESD protection circuits, and consider adding external ESD protection devices, such as TVS diodes, if necessary.

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RS1E200BNTB Overview

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