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RS6N120BHTB1 - ROHM Semiconductor

Description: MOSFET Nch 80V 135A, HSOP8, Power MOSFET: RS6N120BH is a power MOSFET with low-on resistance and high power package, suitable for switching.

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RS6N120BHTB1 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RS6N120BHTB1 - ROHM Semiconductor PCB footprint - Other - Other - HSOP8 ( TB1 )
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3D Models
RS6N120BHTB1 - ROHM Semiconductor - 3D model - Other - HSOP8 ( TB1 )
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RS6N120BHTB1 Details

  • Manufacturer Part Number:

    RS6N120BHTB1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HSOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    135 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    540 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RS6N120BHTB1 Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended temperature range (TJ = -20 to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Monitor the device's junction temperature and adjust the operating conditions accordingly.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • Yes, the RS6N120BHTB1 is suitable for high-frequency switching applications up to 1MHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a gate driver with a low output impedance to minimize switching losses.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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RS6N120BHTB1 Overview

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