Part Image

RSD200N05TL - ROHM Semiconductor

Description: MOSFET, N-CH, 45V, 20A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:45V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

Download RSD200N05TL Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
RSD200N05TL - ROHM Semiconductor PCB footprint - Other - Other - SOT-428
click to zoom
3D Models
RSD200N05TL - ROHM Semiconductor  - 3D model - Other - SOT-428
click to zoom

RSD200N05TL Details

  • Manufacturer Part Number:

    RSD200N05TL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SC-63

  • Package Description:

    CPT3, SC-63, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    2

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RSD200N05TL Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the RSD200N05TL is -55°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended derating curves for the device, and consider the thermal resistance and power dissipation of the package.
  • The recommended gate resistor value for the RSD200N05TL is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the RSD200N05TL is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses, gate charge, and thermal performance.
  • To protect the RSD200N05TL from ESD, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RSD200N05TL Overview

Use the download button to access the RSD200N05TL schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RSD20, or try a keyword search, such as Power Field-Effect Transistors

Parts related to RSD200N05TL

Showing 0 results