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RSJ301N10FRATL - ROHM Semiconductor

Description: MOSFET Nch 100V Vds 30A 0.036Rds(on) 60Qg

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RSJ301N10FRATL - ROHM Semiconductor PCB footprint - Other - Other - LPTS_Master
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RSJ301N10FRATL - ROHM Semiconductor  - 3D model - Other - LPTS_Master
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RSJ301N10FRATL Details

  • Manufacturer Part Number:

    RSJ301N10FRATL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    D2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RSJ301N10FRATL Frequently Asked Questions (FAQs)

  • The thermal resistance of the RSJ301N10FRATL is typically around 2.5°C/W (junction-to-ambient) and 1.25°C/W (junction-to-case). However, this value can vary depending on the specific application and cooling conditions.
  • Yes, the RSJ301N10FRATL is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, it's essential to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation.
  • To ensure the reliability of the RSJ301N10FRATL in a high-temperature environment, it's essential to follow proper derating guidelines, ensure good thermal management, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermally conductive material for the PCB and ensuring good airflow around the device.
  • Yes, it is possible to parallel multiple RSJ301N10FRATL devices to increase current handling. However, it's essential to ensure that the devices are properly matched, and the PCB layout is optimized to minimize current imbalance and thermal mismatch between devices.
  • The recommended gate drive voltage for the RSJ301N10FRATL is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.

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RSJ301N10FRATL Overview

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