Part Image

RSJ650N10TL - ROHM Semiconductor

Description: Nch 100V 65A Power MOSFET

Download RSJ650N10TL Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
RSJ650N10TL - ROHM Semiconductor PCB footprint - Other - Other - LPTS_Master
click to zoom
3D Models
RSJ650N10TL - ROHM Semiconductor  - 3D model - Other - LPTS_Master
click to zoom

RSJ650N10TL Details

  • Manufacturer Part Number:

    RSJ650N10TL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    LPTS, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.0098 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RSJ650N10TL Frequently Asked Questions (FAQs)

  • The thermal resistance (Rth) of the RSJ650N10TL is typically around 1.5°C/W (junction-to-ambient) and 0.5°C/W (junction-to-case). However, this value can vary depending on the specific application, PCB design, and cooling conditions.
  • Yes, the RSJ650N10TL is suitable for high-frequency switching applications due to its low gate charge (Qg) of 120nC and low output capacitance (Coss) of 350pF. However, it's essential to ensure proper PCB layout, decoupling, and snubber design to minimize ringing and EMI.
  • To ensure reliability in high-temperature environments, follow the recommended operating conditions, derate the power dissipation according to the temperature, and use a suitable thermal interface material (TIM) between the device and heat sink. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • The recommended gate drive voltage for the RSJ650N10TL is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and EMI. A lower gate drive voltage can reduce EMI, but it may increase the switching losses.
  • Yes, the RSJ650N10TL can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to minimize current imbalance and oscillations.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RSJ650N10TL Overview

Use the download button to access the RSJ650N10TL schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RSJ65, or try a keyword search, such as Power Field-Effect Transistors

Parts related to RSJ650N10TL

Showing 0 results